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1085 In Stock

BC807-25 RFG

1085 In Stock

BC807-25 RFG

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Manufacturer No:

Taiwan Semiconductor Corporation

Manufacturer:

Taiwan Semiconductor Corporation

Category:

Single BJT Transistors

Package:

Description Differential:

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  • 14506 call call

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    Type

    DESCRIPTION

    HTS

    Mfr

    PPAP

    RoHS

    yes

    SVHC

    Type

    Mount

    RoHS:

    Brand:

    Series

    EU RoHS

    Package

    Category

    HTS Code

    8541.21.00.95

    Mounting

    ECCN (US)

    ECCN Code

    EAR99

    Inventory

    3645

    Packaging

    Tape & Reel (TR)

    Pin Count

    Published

    Automotive

    Packaging:

    PCB changed

    Part Status

    Active

    Power - Max

    300mW

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Technology:

    JESD-30 Code

    R-PDSO-G3

    Subcategory:

    Unit Weight:

    Configuration

    SINGLE

    JESD-609 Code

    Manufacturer:

    Mounting Type

    Surface Mount

    Package Width

    Product Type:

    Surface Mount

    YES

    Terminal Form

    GULL WING

    Configuration:

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Package Height

    Package Length

    Product Status

    Qualification:

    Contact Plating

    Mounting Style:

    Package / Case:

    Part # Aliases:

    Terminal Finish

    Transistor Type

    PNP

    Base Part Number

    Supplier Package

    Factory Lead Time

    24 Weeks

    Product Category:

    Terminal Position

    DUAL

    Additional Feature

    HIGH RELIABILITY

    Number of Elements

    1

    Base Product Number

    Qualification Status

    Not Qualified

    Transistor Polarity:

    Transition Frequency

    100MHz

    Max Breakdown Voltage

    Max Collector Current

    Max Power Dissipation

    Operating Temperature

    -55°C~150°CTJ

    Polarity/Channel Type

    PNP

    Frequency - Transition

    100MHz

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    Minimum DC Current Gain

    Pd - Power Dissipation:

    Supplier Device Package

    DC Current Gain hFE Max:

    Gain Bandwidth Product fT:

    Supplier Temperature Grade

    Emitter Base Voltage (VEBO)

    Emitter- Base Voltage VEBO:

    Number of Elements per Chip

    Transistor Element Material

    SILICON

    Collector Base Voltage (VCBO)

    Collector- Base Voltage VCBO:

    Continuous Collector Current:

    Maximum DC Collector Current:

    Peak Reflow Temperature (Cel)

    NOTSPECIFIED

    Vce Saturation (Max) @ Ib, Ic

    700mV @ 50mA, 500mA

    Current - Collector (Ic) (Max)

    500mA

    Maximum Operating Temperature:

    Maximum Power Dissipation (mW)

    Minimum Operating Temperature:

    DC Collector/Base Gain hfe Min:

    Collector Emitter Voltage (VCEO)

    Current - Collector Cutoff (Max)

    200nA ICBO

    Maximum DC Collector Current (A)

    Maximum Emitter Base Voltage (V)

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Maximum Collector Base Voltage (V)

    Maximum Transition Frequency (MHz)

    Collector Emitter Breakdown Voltage

    Maximum Operating Temperature (°C)

    Minimum Operating Temperature (°C)

    Collector- Emitter Voltage VCEO Max:

    Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

    Collector-Emitter Saturation Voltage:

    DC Current Gain (hFE) (Min) @ Ic, Vce

    160 @ 100mA 1V

    Maximum Collector-Emitter Voltage (V)

    Maximum Collector Cut-Off Current (nA)

    Voltage - Collector Emitter Breakdown (Max)

    45V

    Factory Pack Quantity:Factory Pack Quantity:

    Maximum Collector-Emitter Saturation Voltage (V)

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